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| MCC Features * * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MPSA55 MPSA56 Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 80V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View PNP Silicon Amplifier Transistor TO-92 A E C B E Maximum Ratings Symbol V CEO V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @T =25OC A Derate above 25OC Total Device Dissipation @T =25OC A Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage(1) (IC=1.0mAdc, IB =0) MPSA55 MPSA56 Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCE=60Vdc, IB =0) Collector Cutoff Current (VCB=60Vdc, IE =0) MPSA55 (VCB=80Vdc, IE =0) MPSA56 DC Current Gain (IC=10mAdc, V CE=1.0Vdc) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=1.0Vdc) Rating 80 80 4.0 500 625 5.0 1.5 12 -55 to +150 -55 to +150 Min Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units B Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CEO 60 80 4.0 0.1 Vdc Vdc uAdc D C V(BR)EBO ICES ICBO 0.1 0.1 uAdc G ON CHARACTERISTICS (1) hFE(1) hFE(2) VCE(sat) VBE(on) 100 100 0.25 1.2 Vdc Vdc DIM A B C D E G DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 SMALL-SIGNAL CHARACTERISTICS fT Current-Gain - Bandwidth Product (3) (IC=100mAdc, V CE=1.0Vdc, 50 f=100MHz) MPSA55 MPSA56 Pulse Test: Pulse Width<300us, Duty Cycle<2.0% f T is defined as the frequency at which |h fe| extrapolates to unity. MHz MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE 1. 2. www.mccsemi.com |
Price & Availability of MPSA56
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